Relation between hole traps and non-reactive hydrogen-induced positive charges-Reference-Cited by-同舟云学术

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Relation between hole traps and non-reactive hydrogen-induced positive charges

Published:2001-11 Issue:1-4 Volume:59 Page:67-72
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Zhang J.F,Zhao C.Z,Groeseneken G,Degraeve R,Ellis J.N,Beech C.D

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Relationship between oxide density and charge trapping in SiO2 films

2. Degradation of oxides and oxynitrides under hot hole stress

3. Formation of interface traps in MOSFETs during annealing following low temperature irradiation

4. Defect generation in field-effect transistors under channel-hot-electron stress

5. Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing

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