Properties of ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy-Reference-Cited by-同舟云学术

Properties of ZrO2 dielectric layers grown by metalorganic molecular beam epitaxy

Published:2003-10 Issue:1 Volume:70 Page:35-40
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Hong Jang-Hyuk,Choi Woo-Jong,Myoung Jae-Min

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Structural properties and quasiparticle band structure of zirconia

2. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

3. Organometallic Vapor-Phase Epitaxy: Theory and Practice;Stringfellow,1999

4. Comparison of deposition behavior of Pb(Zr,Ti)O 3 films and its end-member-oxide films prepared by MOCVD

5. Chemical vapour deposition of undoped and spinel-doped cubic zirconia film using organometallic process

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly efficient ZrO2 photocatalysts in the presence of UV radiation synthesized in a very short time by plasma electrolytic oxidation of zirconium;Optical Materials;2023-12

2. Influence of oxygen partial pressure on the structural, optical and electrical properties of magnetron sputtered Zr0.7Nb0.3O2 films;Applied Physics A;2021-12

3. Effect of Oxidation Temperature on Magnetron Sputtered Zirconium Niobium Films;Biointerface Research in Applied Chemistry;2021-06-18

4. Substrate temperature influenced ZrO 2 films for MOS devices;Surface and Interface Analysis;2020-03-28

5. Structural, electrical and optical properties of nanostructured ZrO2 thin film deposited by SILAR method;AIP Conference Proceedings;2018