Study on the amorphous Ta2O5 thin film capacitors deposited by dc magnetron reactive sputtering for multichip module applications-Reference-Cited by-同舟云学术

Study on the amorphous Ta2O5 thin film capacitors deposited by dc magnetron reactive sputtering for multichip module applications

Published:1999-12 Issue:3 Volume:67 Page:108-112
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Cho Sung-Dong,Paik Kyung-Wook

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference14 articles.

1. L. Brandt, X. Xi, D. Baxter, G. Owings, S. Fu, G. Matijascvic, P. Gandhi, Proceedings of the Pan Pacific Microelectronics Symposium, Kona, Hawaii, February 1998, p. 195.

2. D. Nelms, R. Ulrich, L. Schaper, S. Reeder, Proceedings of the 48th Electronic Components and Technology Conference, Seattle, WA, May 1998, p. 247.

3. Study of amorphous Ta2O5 thin films by DC magnetron reactive sputtering

4. Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5films on silicon

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