Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni-Reference-Cited by-同舟云学术

Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni

Published:2000-04 Issue:1-3 Volume:73 Page:95-98
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Hoelzl R,Range K.-J,Fabry L,Hage J,Raineri V

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

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3. Thermal stability of copper silicide passivation layers in copper-based multilevel interconnects

4. Metal Impurities in Silicon-Device Fabrication;Graff,1995

5. R. Hoelzl, D. Huber, L. Fabry, K.-J. Range, J. Electrochem. Soc. 146 (1999) 2245.

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