Optical characterisation of self organized InAs/GaAs quantum dots grown by MBE
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
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2. Exciton localization inInxGa1−xAs-GaAs coupled quantum-well structures
3. Thermally activated carrier transfer and luminescence line shape in self‐organized InAs quantum dots
4. Relaxation and recombination in ultrasmall InAs quantum dots
5. Critical layer thickness for self-assembled InAs islands on GaAs
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1. Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructure;Journal of Luminescence;2013-04
2. InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic;Journal of Nanoparticle Research;2011-03-29
3. Stranski–Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrate;Applied Physics A;2010-05-12
4. Stranski-Krastanov mode grown multilayer In(Ga)As/GaAs quantum dot heterostructures on germanium: a step toward integrating III-V photonics on silicon;Proceedings of SPIE;2010
5. Investigation of populated InAs/GaAs quantum dots by photoluminescence and photoreflectance;Physica E: Low-dimensional Systems and Nanostructures;2005-01
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