Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen-Reference-Cited by-同舟云学术

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Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

Published:2000-04 Issue:1-3 Volume:73 Page:134-138
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Misiuk A,Barcz A,Ratajczak J,Lopez M,Romano-Rodriguez A,Bak-Misiuk J,Surma H.B,Jun J,Antonova I.V,Popov V.P

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Formation of a buried oxide film at the damage peak induced by oxygen implantation into a Si substrate

2. Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

3. On the nature of the dislocation luminescence in silicon

4. Luminescence Properties of Oxygen-Containing Silicon Annealed at Enhanced Argon Pressure

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O;Solid State Phenomena;2009-10

2. Modification of the SOI-like structures by annealing under high hydrostatic pressure;Journal of Alloys and Compounds;2004-01

3. Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen;Journal of Materials Science: Materials in Electronics;2003

4. Effect of High Temperature—Pressure on Buried Silicon Dioxide in Simox and Soi Structures;Radiation Effects and Defects in Solids;2003-01

5. Optically Active Silicon Nanostructures Prepared from Implanted Si by Annealing at High Hydrostatic Pressure;Nanostructures: Synthesis, Functional Properties and Applications;2003

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