On the nature of the dislocation luminescence in silicon-Reference-Cited by-同舟云学术

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On the nature of the dislocation luminescence in silicon

Published:1977-10-01 Issue:2 Volume:83 Page:K137-K139
ISSN:0370-1972
Container-title:Physica Status Solidi (b)
language:de
Short-container-title:Phys. Stat. Sol. (b)

Author:

Drozdov N. A.,Patrin A. A.,Tkachev V. D.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Influence of Uniaxial Stress on the Indirect Absorption Edge in Silicon and Germanium

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5. Temperature dependence of dislocation-related photoluminescence (D1) of self-implanted silicon subjected to additional boron implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-06

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