GaN and AlGaN metal–semiconductor–metal photodetectors-Reference-Cited by-同舟云学术

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GaN and AlGaN metal–semiconductor–metal photodetectors

Published:1997-12 Issue:1-3 Volume:50 Page:311-314
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ferguson I,Tran C.A,Karlicek Jr R.F,Feng Z.C,Stall R,Liang S,Lu Y,Joseph C

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Gated photodetector based on GaN/AlGaN heterostructure field effect transistor

2. AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

3. Improvement of metal-semiconductor-metal GaN photoconductors

4. Schottky barrier detectors on GaN for visible–blind ultraviolet detection

5. Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The methods of Mg-doped GaN-based p-type semiconductors;Highlights in Science, Engineering and Technology;2023-11-28

2. Thin film transistors and metal–semiconductor–metal photodetectors based on GaN thin films grown by inductively coupled plasma metal-organic chemical vapor deposition;Journal of Physics D: Applied Physics;2022-06-21

3. The road ahead for ultrawide bandgap solar-blind UV photodetectors;Journal of Applied Physics;2022-04-21

4. Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation;IEEE Journal of Quantum Electronics;2021-12

5. Enhanced performance of high Al-content AlGaN MSM photodetectors by electrode modification using hexadecanethiol;Optics Express;2021-02-04

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