The methods of Mg-doped GaN-based p-type semiconductors

Abstract

This article mainly discusses the disadvantages of the third-generation semiconductor material based on GaN and points the ways of optimization and development. The P-type doping optimization method is especially focused. As the core element of P-type doping, Mg element has its advantages and disadvantages in research and use, and some improvement methods are pointed out. In addition, the principles of several specific P-type doping methods, mainly including polarization-induced doping, Mg-delta doping, superlattice doping, and Mg-In co-doping are discussed.