Abstract
Abstract
Gallium nitride (GaN) films with an almost single-crystalline quality, smooth surface, and high optical transmission were prepared at 580 °C using inductively coupled plasma metal-organic chemical vapor deposition (ICP-MOCVD) based on a showerhead structure. The GaN thin films with unintentional doping were used as the active layer in the production of thin-film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors. TFTs had on-to-off current ratios of 6.3 × 103 and their output characteristics demonstrated the proper saturation behavior of transistors. The field-effect mobility was 3.79 cm2 (V s)−1. MSMs were visible blind, with a contrast of almost three orders of magnitude between ultraviolet and green light. The maximum responsivity was 34 mA W−1 with a 10 V bias voltage and a 325 nm illumination. When the bias voltage was >2 V, the quantum efficiency and noise equivalent power under 266 nm illumination reached >10% and <1
pW
(
H
z
1/2
)
−
1
, respectively. These findings suggest that the ICP-MOCVD technique has the potential to be used to fabricate (opto)electronic devices at low temperatures.
Funder
Key Lab Program of BNRist
National Natural Science Foundation of China
National Key Research and Development Program
China Postdoctoral Science Foundation
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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