Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.4903365
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Deposition and Structural Characterization of Mg-Zn Co-Doped GaN Films by Radio-Frequency Magnetron Sputtering in a N2-Ar2 Environment;Crystals;2024-07-04
2. Hollow cathode enhanced capacitively coupled plasmas in Ar/N2/H2 mixtures and implications for plasma enhanced ALD;Journal of Vacuum Science & Technology B;2022-07
3. Thin film transistors and metal–semiconductor–metal photodetectors based on GaN thin films grown by inductively coupled plasma metal-organic chemical vapor deposition;Journal of Physics D: Applied Physics;2022-06-21
4. Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes;Coatings;2021-12-07
5. Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application;Ceramics International;2020-04
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