EXAFS studies of plasma-enhanced MBE grown Group III-Nitrides-Reference-Cited by-同舟云学术

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EXAFS studies of plasma-enhanced MBE grown Group III-Nitrides

Published:1997-12 Issue:1-3 Volume:50 Page:38-41
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Blant A.V,Cheng T.S,Jeffs N.J,Foxon C.T,Bailey C,Harrison P.G,Dent A.J,Mosselmans J.F.W

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. GaN, AlN, and InN: A review

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy

4. The growth and properties of mixed group V nitrides

5. The growth and properties of group III nitrides

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Local structure around In atoms in coherently grownm-plane InGaN film;Journal of Synchrotron Radiation;2017-08-21

2. The effective role of time in synthesising InN by chemical method at low temperature;Journal of Materials Science: Materials in Electronics;2014-01-28

3. Atomic distribution inInxGa1−xNsingle quantum wells studied by extended x-ray absorption fine structure;Physical Review B;2007-07-12

4. Localization of excitation in InGaN epilayers;Philosophical Magazine;2007-05

5. Extended X-ray Absorption Fine Structure Studies of InGaN Epilayers;MRS Proceedings;2004

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