Growth of GaN and AlN thin films by laser induced molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Oriented aluminum nitride thin films deposited by pulsed‐laser ablation
2. Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001)
3. Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition
4. Epitaxial growth of cubic AlN films on (100) and (111) silicon by pulsed laser ablation
5. AlN thin films deposition by laser ablation of Al target in nitrogen reactive atmosphere
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1. Low Temperature Growth of GaN Epitaxial Layers on Sapphire (0001) by Pulsed Laser Deposition Using Liquid Gallium Target;Science of Advanced Materials;2014-06-01
2. Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD;Journal of Materials Science: Materials in Electronics;2013-12-19
3. Optical properties and residual stress in aluminum nitride films prepared by alternating-current dual reactive magnetron sputtering;Applied Optics;2011-04-28
4. Structural and composition analysis of GaN films deposited by cyclic-PLD at different substrate temperatures;Sensors and Actuators A: Physical;2005-05
5. Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy;Journal of Applied Physics;2003-02-15
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