Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1535257
Reference36 articles.
1. Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers
2. Growth defects in GaN films on sapphire: The probable origin of threading dislocations
3. Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
4. Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy
5. Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources
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