Heteroepitaxial growth of 3C-SiC on SOI for sensor applications-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of 3C-SiC on SOI for sensor applications

Published:1999-07 Issue: Volume:61-62 Page:516-521
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Krötz G,Möller H,Eickhoff M,Zappe S,Ziermann R,Obermeier E,Stoemenos J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. G. Krötz, W. Wondrak, M. Eickhoff, V. Lauer, E. Obermeier, and C. Cavalloni; New High-Temperature Sensors for Innovative Engine Management, Springer Proceedings ‘Advanced Microsystems for Automotive Applications’, Berlin 1998, p. 223.

2. SOITEC: S.O.I TEC S.A., 1, Place Firmin Gautier, 38000 Grenoble cedex 9-France

3. Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition

4. Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors

5. H. Möller, M. Eickhoff, M. Rapp, G. Krötz, High quality b-SiC films obtained by low temperature heteroepitaxy combined with a fast carbonisation step; submitted for publication to Applied Physics A, 1998

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of alternating precursor supply and gas flow on the LPCVD growth behavior of polycrystalline 3C-SiC thin films on Si;Sensors and Actuators A: Physical;2024-07

2. Polycrystalline Lpcvd 3c-Sic Thin Films on Sio2 Using Alternating Supply Deposition;2024

3. Impact of Alternating Precursor Supply and Gas Flow on the Lpcvd Growth Behavior of Polycrystalline 3c-Sic Thin Films on Si;2023

4. Foundry Service of CMOS MEMS Processes and the Case Study of the Flow Sensor;Processes;2022-06-29

5. Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100);Materials;2021-08-06

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