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Annealing ion implanted SiC with an AlN cap

  • Published:1999-07 Issue: Volume:61-62 Page:281-286
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Jones K.A,Shah P.B,Kirchner K.W,Lareau R.T,Wood M.C,Ervin M.H,Vispute R.D,Sharma R.P,Venkatesan T,Holland O.W

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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1. Main Differences in Processing Si and SiC Devices;Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications;2018-09-12

2. Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications;Journal of Electronic Materials;2015-11-03

3. Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0);Applied Surface Science;2015-10

4. Fabrication and characteristics of a 4H-SiC junction barrier Schottky diode;Journal of Semiconductors;2011-06

5. Study of 4H-SiC junction barrier Schottky diode using field guard ring termination;Chinese Physics B;2010-09
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