Study of 4H-SiC junction barrier Schottky diode using field guard ring termination-Reference-Cited by-同舟云学术

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Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

Published:2010-09 Issue:9 Volume:19 Page:097107
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Feng-Ping Chen,Yu-Ming Zhang,Hong-Liang Lü,Yi-Men Zhang,Jian-Hua Huang

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Reference10 articles.

1. Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

2. Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and Characterization of Kilovolt p-Type SiC JBS Diodes With Enhanced Current Capability and Electroluminescence Phenomenon;IEEE Electron Device Letters;2024-09

2. Design and Analysis of P-GaN/N-Ga₂O₃ Based Junction Barrier Schottky Diodes;IEEE Transactions on Electron Devices;2021-12

3. High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices;Materials;2020-01-17

4. Scalability of dark current in silicon PIN photodiode;Chinese Physics B;2018-04

5. Fabrication and Application of 1.7KV SiC-Schottky Diodes;Materials Science Forum;2015-06

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