Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon-Reference-Cited by-同舟云学术

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Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon

Published:1999-07 Issue: Volume:61-62 Page:526-530
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Scheiner J,Goldhahn R,Cimalla V,Ecke G,Attenberger W,Lindner J.K.M,Gobsch G,Pezoldt J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Low temperature growth of single-crystalline cubic SiC on Si(111) by solid source molecular beam epitaxy

2. The Growth of Single Crystal of 3C-SiC on the Si Substrate by the MBE Method Using Multi Electron Beam Heating

3. W. Attenberger, J.K.M. Lindner, V. Cimalla, J. Pezoldt, 2nd Eur. Conf. on SiC and Related Materials ECSCRM’98, 2–4 September 1998, Montpellier, France Mat. Sci. Eng. B61–62 (1999) 544–548.

4. Ellipsometry and Polarized Light;Azzam,1989

5. A User Guide to Ellipsometry;Tompkins,1993

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