Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN-Reference-Cited by-同舟云学术

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Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

Published:2001-04 Issue:1-3 Volume:81 Page:136-139
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kim S.,Rhee S.J.,White J.O.,Mitofsky A.M.,Li X.,Papen G.C.,Coleman J.J.,Bishop S.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Luminescence properties of erbium in III–V compound semiconductors

2. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN

3. Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

4. Neodymium and Erbium Implanted Gan

5. Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD;Journal of Alloys and Compounds;2018-10

2. Er3+ related 1.53μm emission from Er–Si-codoped ZnO multilayer film prepared by rf-sputtering;Thin Solid Films;2011-11

3. Theoretical investigations of EPR parameters and local structure of single erbium center in hexagonal GaN layers;Materials Science and Engineering: B;2008-01

4. Theoretical investigation of a single erbium center in hexagonal gallium nitride;Journal of Luminescence;2007-10

5. Resonant optical spectroscopy of Er3+ centers in hexagonal GaN-analysis of symmetry;Optical Materials;2006-01

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