Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD-Reference-Cited by-同舟云学术

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Compensation of magnesium by residual carbon impurities in p-type GaN grown by MOCVD

Published:2018-10 Issue: Volume:765 Page:245-248
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Qi H.R.,Yi L.K.,Huang J.L.^ORCID,Liu S.T.,Liang F.,Zhou M.,Zhao D.G.,Jiang D.S.

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference23 articles.

1. Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon and Silicon Impurity Defects in GaN: Simulating Single-Photon Emitters by First Principles;Materials;2024-08-01

2. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing;Journal of Applied Physics;2023-07-18

3. Influence of polarities on optical properties of Mg-doped GaN films grown on GaN free-standing substrates by MOCVD;Journal of Luminescence;2023-05

4. Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory;Applied Physics Letters;2022-12-19

5. GaN-based light-emitting materials prepared by hot-wall metal-organic chemical vapor deposition;Applied Physics A;2022-08-22

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