Precision placement of heteroepitaxial semiconductor quantum dots-Reference-Cited by-同舟云学术

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Precision placement of heteroepitaxial semiconductor quantum dots

Published:2003-08 Issue:1-3 Volume:101 Page:1-8
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Hull R.,Gray J.L.,Kammler M.,Vandervelde T.,Kobayashi T.,Kumar P.,Pernell T.,Bean J.C.,Floro J.A.,Ross F.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference41 articles.

1. Step Energies and Roughening of Strained Layers

2. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films

3. Practical issues in the realization of quantum-dot cellular automata

4. G.L. Snider, A.O. Orlov, R.V. Kummamuru, R. Ramasubramanian, I. Amlani, G.H. Bernstein, C.S. Lent, in: E.A. Stach, E.H. Chason, R. Hull, S.D. Bader (Eds.), Mater. Res. Soc. Symp. Proc., Vol. 696, Materials Research Society, Warrendale, PA, 2002, p. 221.

5. Nanometer-scale Ge selective growth on Si(001) using ultrathin SiO2 film

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1. Role of deposition noise in nanostructure formation: A theoretical investigation of quantum dots and quantum dotmolecules;Journal of Applied Physics;2022-01-14

2. Quantum dot molecule formation in Si-Ge heteroepitaxy on pit–patterned Si(001) substrate: A theoretical study;Journal of Crystal Growth;2020-04

3. Fabrication of Ordered Arrays of Quantum Dot Molecules Based on the Design of Pyramidal Pit Patterns on Semiconductor Surfaces;Industrial & Engineering Chemistry Research;2019-11-08

4. Comparison of technologies for nano device prototyping with a special focus on ion beams: A review;Applied Physics Reviews;2017-03

5. 4 Surface and Chemical Considerations in Heteroepitaxy;Heteroepitaxy of Semiconductors;2016-09-15

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