AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference10 articles.
1. Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
2. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN
3. Si-doped AlxGa1-xN photoconductive detectors
4. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
5. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
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