Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371512
Reference28 articles.
1. Semiconductor ultraviolet detectors
2. Photoconductor gain mechanisms in GaN ultraviolet detectors
3. Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
4. Schottky barrier detectors on GaN for visible–blind ultraviolet detection
5. Visible-blind ultraviolet photodetectors based on GaN p-n junctions
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