Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem-Reference-Cited by-同舟云学术

Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem

Author:

Manfredotti C.,Fizzotti F.,Lo Giudice A.,Jaksic M.,Pastuovic Z.,Paolini C.,Olivero P.,Vittone E.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference10 articles.

3. J.D. Jackson, Classical Electrodynamics, 2nd ed., Wiley, New York, 1975.

5. The Stopping and Range of Ions in Solids;Ziegler,1985

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04

2. CVD diamond as a position sensitive detector using charge carrier transition time;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

5. Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04