Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping-Reference-Cited by-同舟云学术

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Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping

Published:2002-02 Issue:1-3 Volume:89 Page:211-215
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Thompson P.E,Bennett J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. The International Technology Roadmap for Semiconductors, 1999 ed. [http://public.itrs.net].

2. Characterization of low-energy (100 eV–10 keV) boron ion implantation

3. Process effects in shallow junction formation by plasma doping

4. Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

5. Boron-enhanced diffusion of boron: Physical mechanisms

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing dopant activation in Si:P double δ-layers;Journal of Crystal Growth;2010-10

2. Impact of boron-interstitial clusters on Hall scattering factor in high-dose boron-implanted ultrashallow junctions;Journal of Applied Physics;2009-02-15

3. Optical Properties of Multiple, Delta-doped Si:B/Si Layers;MRS Proceedings;2006

4. Formation of p[sup +] shallow junctions using SiGe barriers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

5. The Use of SiGe Barriers During the Formation of p+ Shallow Junctions by Ion Implantation;MRS Proceedings;2004

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