Thin SiGe buffers with high Ge content for n-MOSFETs-Reference-Cited by-同舟云学术

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Thin SiGe buffers with high Ge content for n-MOSFETs

Published:2002-02 Issue:1-3 Volume:89 Page:341-345
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lyutovich K,Bauer M,Kasper E,Herzog H.-J,Perova T,Maurice R,Hofer C,Teichert C

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Dislocations in Relaxed SiGe/Si Heterostructures

2. Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation

3. In situ relaxed Si[sub 1−x]Ge[sub x] epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates

4. New virtual substrate concept for vertical MOS transistors

5. Relaxed SiGe buffer layer growth with point defect injection

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications;Applied Surface Science;2023-09

2. Enhanced Si–Ge interdiffusion in high phosphorus-doped germanium on silicon;Semiconductor Science and Technology;2015-08-18

3. Local strained silicon platform based on differential SiGe/Si epitaxy;Journal of Crystal Growth;2011-06

4. Stress relaxation of Si/Si1−x Ge x /Si structure prepared by ion implantation and subsequent annealing process;Rare Metals;2011-05-31

5. The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs;Solid-State Electronics;2010-03

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