Optoelectronic properties of InAs1−xPx semiconducting alloys
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Atomic Diffusion in III–V Semiconductors;Tuck,1988
2. Effects of compositional disorder upon electronic and lattice properties of GaxIn1−xAs
3. Pseudopotential calculations of electronic properties of Ga1−xInxN alloys with zinc-blende structure
4. Band structure of semiconductor alloys beyond the virtual crystal approximation. effect of compositional disorder on the energy gaps in GaPxAs1−x
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