Band structure of semiconductor alloys beyond the virtual crystal approximation. effect of compositional disorder on the energy gaps in GaPxAs1−x
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
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1. Why Is the Bandgap of GaP Indirect While That of GaAs and GaN Are Direct?;physica status solidi (RRL) – Rapid Research Letters;2024-03-29
2. The discovery of the effect of compositional disorder on the opto-electronic properties of the deformed InGaAsP quaternary;Materials Today Communications;2023-06
3. Exploring the Compositional Space of High-Entropy Alloys for Cost-Effective High-Temperature Applications;Frontiers in Materials;2022-01-20
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