The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1×1) Si(100)-Reference-Cited by-同舟云学术

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The formation of ordered, ultrathin SiO2/Si(100) interfaces grown on (1×1) Si(100)

Published:2001-12 Issue:3 Volume:87 Page:303-316
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Herbots N,Shaw J.M,Hurst Q.B,Grams M.P,Culbertson R.J,Smith David J,Atluri V,Zimmerman P,Queeney K.T

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Si→SiO2transformation: Interfacial structure and mechanism

2. Characterization and production metrology of thin transistor gate oxide films

3. Comment on ‘‘Submicrocrystallites and orientational proximity effect’’

4. The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

5. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

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