Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions-Reference-Cited by-同舟云学术

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Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions

Published:1997-04 Issue:1-3 Volume:46 Page:259-262
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kalinina E.V.,Kholujanov G.F.,Zubrilov A.S.,Tsvetkov D.V.,Vatnik M.P.,Soloviev V.A.,Tretjakov V.D.,Kong H.,Dmitriev V.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. Fabrication of 6H‐SiC light‐emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

2. Deep centers and electroluminescence in 4HSiC diodes with a p-type base region

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction;Journal of Physics D: Applied Physics;2018-06-11

2. Al doping of 4H-SiC by laser irradiation to coated Al film and its application to junction barrier Schottky diode;Japanese Journal of Applied Physics;2016-02-29

3. Ideal 4H-SiC pn junction and its characteristic shunt;Materials Science and Engineering: B;2001-03

4. Material and n–p junction characteristics of As- and Sb-implanted SiC;Diamond and Related Materials;2000-11

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