Author:
Strel'chuk A.M.,Savkina N.S.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions
2. Fabrication and investigation of the SiC based rectifiers;Anikin,1986
3. A.M. Strel'chuk, Mechanisms of current and carrier recombination in SiC pn structures. PhD thesis (A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 1992).
4. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
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