Issues in molecular-beam epitaxy of ZnSe-based heterostructures for blue-green lasers-Reference-Cited by-同舟云学术

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Issues in molecular-beam epitaxy of ZnSe-based heterostructures for blue-green lasers

Published:1997-01 Issue:1-3 Volume:43 Page:21-28
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Tournié E.,Morhain C.,Ongaretto C.,Bousquet V.,Brunet P.,Neu G.,Faurie J.-P.,Triboulet R.,Ndap J.O.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth

2. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

3. Blue‐green laser diodes

4. Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy

5. Room temperature pulsed operation of 498 nm laser with ZnMgSSe cladding layers

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1. Bulk Crystal Growth of Wide-Bandgap II-VI Materials;Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials;2010-07-14

2. Extended x-ray absorption fine structure study of arsenic in HgCdTe: p-type doping linked to nonsubstitutional As incorporation in an unknown AsHg8 structure;Journal of Applied Physics;2009-11-15

3. Solid state recrystallization: a promising technique for the growth of semiconductor materials;Crystal Research and Technology;2003-04

4. Incorporation of As Se centers in ZnSe far from equilibrium;Journal of Physics and Chemistry of Solids;2002-10

5. Dichlorobis[1,3-dimethyl-2(3H)-imidazoleselone]zinc(II): a potential zinc selenide synthon;Inorganic Chemistry Communications;2002-02

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