Author:
Berwick K.,Brozel M.R.,Buttar C.M.,Sellin P.,Young S.M.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
5 articles.
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1. The effect of nitrogen implantation on structural changes in semi-insulating GaAs;Materials Science and Engineering: B;2002-06
2. Raman scattering studies on low-energy nitrogen-implanted semi-insulating GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-06
3. Study on the performance of SI-GaAs and SI-InP surface barrier detectors for alpha and gamma detection;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2000-11
4. Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-09
5. Determination of the EL2 introduction rate and Fermi-level shift due to proton and pion irradiation in semi-insulating GaAs;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-01