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The effect of nitrogen implantation on structural changes in semi-insulating GaAs

  • Published:2002-06 Issue:1 Volume:94 Page:66-70
  • ISSN:0921-5107
  • Container-title:Materials Science and Engineering: B
  • language:en
  • Short-container-title:Materials Science and Engineering: B

Author:

Jayavel P.,Santhakumar K.,Rajagopalan S.,Sastry V.S.,Balamurugan K.,Nair K.G.M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Passivation of yellow luminescence of MOCVD grown InGaN/GaN heterostructures by Nitrogen - ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-10

2. Structural, optical and annealing studies of nitrogen implanted GaAs;Physica B: Condensed Matter;2018-09

3. Studies on the nitrogen ion irradiation induced defects in n-GaAs by deep level transient spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-12

4. Deep level transient spectroscopic studies of high-energy nitrogen-irradiated Au/n-GaAs Schottky barrier diodes;Semiconductor Science and Technology;2002-08-09
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