Author:
Rogalla M.,Battke M.,Duda N.,Geppert R.,Göppert R.,Irsigler R.,Ludwig J.,Runge K.,Schmid Th.,Joerger W.,Benz K.W.
Subject
Instrumentation,Nuclear and High Energy Physics
Cited by
7 articles.
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1. Defect engineering in GaAs using high energy light ion irradiation: Role of electronic energy loss;Journal of Applied Physics;2011-02
2. Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-11
3. Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2003-06
4. High energy ion implantation studies on GaAs and InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07
5. Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-04