Impurity-induced resonance Raman scattering at the (e,A0) threshold in lightly carbon-doped p-type GaAs at
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference40 articles.
1. Carbon diffusion in undoped,n‐type, andp‐type GaAs
2. Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
3. Di-Carbon Defects in Annealed Highly Carbon Doped GaAs
4. Raman studies of heavily carbon doped GaAs
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