Depth dependence of photoluminescence and chemical bonding in porous silicon-Reference-Cited by-同舟云学术

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Depth dependence of photoluminescence and chemical bonding in porous silicon

Published:1998-12 Issue:1-4 Volume:80 Page:179-182
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Sendova-Vassileva M,Dimova-Malinovska D,Kamenova M,Kakanakova-Georgieva A,Marinova Ts

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference14 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Optical Characterization of the Visible Photoluminescence from Porous Silicon

3. Light emission in thermally oxidized porous silicon: Evidence for oxide‐related luminescence

4. Correlation between the photoluminescence and chemical bonding in porous silicon

5. Depth‐dependent porous silicon photoluminescence

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photocatalytic properties of Zn2SnO4 powders prepared by different modified hydrothermal routes;Research on Chemical Intermediates;2019-04-16

2. Electrochemical Preparation of Pore Wall Modification Gradients across Thin Porous Silicon Layers;Langmuir;2010-03-10

3. THE EFFECTS OF ANNEALING OF A p-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM;Surface Review and Letters;2002-02

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