THE EFFECTS OF ANNEALING OF A p-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM-Reference-Cited by-同舟云学术

THE EFFECTS OF ANNEALING OF A p-TYPE PHOTOLUMINESCENT POROUS SILICON IN VACUUM

Published:2002-02 Issue:01 Volume:09 Page:261-265
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

SHIN H. J.¹²,LEE M. K¹,HWANG C. C.¹,KIM K. J.¹,KANG T.-H.¹,KIM B.¹²,KIM G. B.²,HONG C. K.²,LEE K. W.³,KIM Y. Y.³

Affiliation:

1. Beamline Department, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea

2. Physics Department, POSTECH, Pohang, 790-784, Korea

3. Physics Department, Kongju National University, Kongju, Chungnam, 314-701, Korea

Abstract

The changes of the structure and chemical states of photoluminescent p-type porous silicon (PS) caused by annealing in vacuum were investigated with atomic force microscopy and X-ray photoemission spectroscopy. The relative intensities of the silicon dioxide and suboxide peaks increased with the annealing temperature. The average size of the fine crystallites of the as-prepared samples was 5–10 nm and became 50–100 nm after being annealed at 550°C. The cause of photoluminescence quenching upon annealing is discussed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X02002166

Reference19 articles.

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