InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer-Reference-Cited by-同舟云学术

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InGaN-based light-emitting diodes with Al content graded p-AlxGa1-xN top contact layer

Published:2022-09 Issue: Volume:143 Page:115352
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Lee Ming- Lun,Tu Shang-Ju,Sheu Jinn-Kong

Funder

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Design of hole-blocking and electron-blocking layers in AlxGa1–xN-based UV light-emitting diodes;Shih;IEEE Trans. Electron. Dev.,2016

2. Improved performance of GaN-based ultraviolet LEDs with electron blocking layers composed of double-peak p-type AlxGa1−xN/GaN superlattice layers;Huang;IEEE Access,2021

3. Insight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes;Zhao;AIP Adv.,2018

4. P-type conduction in Mg-doped GaN and Al GaN grown by metal-organic vapor phase epitaxy;Tanaka;Appl. Phys. Lett.,1994

5. Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD;Suzuki;J. Cryst. Growth,1998

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of different AlGaN insertion layer thicknesses on the photoelectric properties of InGaN/AlGaN near UV light emitting diodes;Results in Physics;2023-12

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