Insight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes-Reference-Cited by-同舟云学术

Insight into the physical mechanism of AlxGa1−xN electron blocking layer in GaN-based light emitting diodes

Published:2018-10 Issue:10 Volume:8 Page:105303
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhao Juanli¹,Xiong Zhihua¹,Wu Ning¹

Affiliation:

1. Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science & Technology Normal University, Nanchang 330018, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/1.5046131

Reference29 articles.

1. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

2. Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop

3. Efficiency droop in light-emitting diodes: Challenges and countermeasures

4. Origin of efficiency droop in GaN-based light-emitting diodes

5. Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes

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