Author:
Shi Kaiju,Li Hongbin,Ma Wang,Wang Chengxin,Li Changfu,Wei Yehui,Ji Ziwu,Xu Xiangang
Funder
National Natural Science Foundation of China
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Elastically frustrated rehybridization: origin of chemical order and compositional limits in InGaN quantum wells;Lymperakis;Phys. Rev. Mater.,2018
2. Status and future of high-power light-emitting diodes for solid-state lighting;Krames;Sci. Rep.,2017
3. Analysis of luminescence spectra of rectangular and trapezoidal InGaN/GaN multiple quantum wells under varying bias conditions;Karan;Opt. Mater.,2018
4. InGaN light-emitting diodes on c-face sapphire substrates in green gap spectral range;Saito;Appl. Phys. Express,2013
5. Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations;Maur;Phys. Rev. Lett.,2016
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献