The effect of surface proximity on electron transport through ultra-shallow -doped layers in silicon-Reference-Cited by-同舟云学术

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The effect of surface proximity on electron transport through ultra-shallow -doped layers in silicon

Published:2008-03 Issue:5 Volume:40 Page:1566-1568
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Clarke W.R.,Zhou X.J.,Fuhrer A.,Reusch T.C.G.,Simmons M.Y.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Device scaling limits of Si MOSFETs and their application dependencies

2. Series resistance limits for 0.05μm MOSFETs

3. Delta doping in silicon

4. Formation of heavily P-doped Si epitaxial film on Si(100) by multiple atomic-layer doping technique

5. Fully Quantum-Mechanical Modeling of Tunneling Current in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Devices

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space;Sensors;2023-12-15

2. Nondestructive imaging of atomically thin nanostructures buried in silicon;Science Advances;2017-06-02

3. Si-Based MOSFET and Thin Film Transistor Prepared via Hot Wire Implantation Doping Technique;IEEE Electron Device Letters;2015-02

4. Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus;Thin Solid Films;2015-01

5. Drastic reduction in the surface recombination velocity of crystalline silicon passivated with catalytic chemical vapor deposited SiNx films by introducing phosphorous catalytic-doped layer;Journal of Applied Physics;2014-07-28

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