A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Silicon-on-insulator Technology: Materials to VLSI;Colinge,2004
2. Sub-50 nm P-channel FinFET
3. Multiple-gate SOI MOSFETs
4. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
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1. Electrothermal analysis of novel N-P-P FinFET with electrically doped drain: a dual material gate device for reliable nanoscale applications;Applied Physics A;2020-07-13
2. A nano scale triple-gate transistors to suppress the aggregated body holes;Silicon;2018-12-12
3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET;Technical Physics Letters;2018-11
4. The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics;Journal of Computational Electronics;2018-03-26
5. Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance;Physica E: Low-dimensional Systems and Nanostructures;2017-06
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