Electro-thermal analysis of non-rectangular FinFET and modeling of fin shape effect on thermal resistance

Author:

Karimi Fa.,Orouji Ali A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. International Technology Roadmap for Semiconductors;Wilson,2013

2. Device scaling limits of Si MOSFETs and their application dependencies;Frank;IEEE,2001

3. A novel fin field effect transistor by extra insulator layer for high performance nanoscale applications;Orouji;J. Comput. Electron.,2015

4. Ultimately thin double-gate SOI MOSFETs;Ernst;IEEE Trans. Electron Devices,2003

5. Generalized scale length for two-dimensional effects in MOSFETs;Frank;IEEE Electron Device Lett.,1998

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