Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector
3. Origin of efficiency droop in GaN-based light-emitting diodes
4. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
5. Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses
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1. Enhancement of Luminous Power and Efficiency in InGaN/GaN–Light Emitting Diode using high-k dielectric material;Optical and Quantum Electronics;2021-07-22
2. Design and comparative study of vertical LEDs with graphene, ITO and Ni/Au as contact/current spreading layer;Materials Research Express;2018-01-03
3. Assessment of end-of-life design in solid-state lighting;Environmental Research Letters;2017-08-01
4. A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement;Superlattices and Microstructures;2016-08
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