Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector-Reference-Cited by-同舟云学术

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Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector

Published:2010-11 Issue:1 Volume:43 Page:289-292
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Cai Li-E,Zhang Bao-Ping,Zhang Jiang-Yong,Wu Chao-Min,Jiang Fang,Hu Xiao-Long,Chen Ming,Wang Qi-Ming

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Origin of efficiency droop in GaN-based light-emitting diodes

2. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

3. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

4. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

5. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors;ACS Omega;2024-07-02

2. Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates;Crystals;2020-09-01

3. Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate;Applied Physics Express;2014-03-13

4. Efficiency droop improvement for InGaN-based light-emitting diodes with gradually increased In-composition across the active region;Physica E: Low-dimensional Systems and Nanostructures;2013-08

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