Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses-Reference-Cited by-同舟云学术

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Study of InGaN–GaN Light-Emitting Diodes With Different Last Barrier Thicknesses

Published:2010-06 Issue:12 Volume:22 Page:860-862
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Chen Jun-Rong,Lu Tien-Chang,Kuo Hao-Chung,Fang K. L.,Huang K. F.,Kuo C. W.,Chang C. J.,Kuo C. T.,Wang Shing-Chung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/5467343/05443564.pdf?arnumber=5443564

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2. Modulating Carrier Distribution for Efficient AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Introducing an Asymmetric Quantum Well;Journal of Electronic Materials;2021-03-09

3. Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a Al x Ga1-x N carrier reservoir layer;Applied Physics Express;2019-05-31

4. Design and comparative study of vertical LEDs with graphene, ITO and Ni/Au as contact/current spreading layer;Materials Research Express;2018-01-03

5. On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes;Optics Express;2017-07-05

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