The simulation study for the nanometer-scale selective growth of Si islands on Si(001) windows in ultrathin SiO2 films
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Nanostructure fabrication using the selective thermal desorption of SiO2 induced by electron beams
2. Nanometer-scale Si selective epitaxial growth on Si(001) surfaces using the thermal decomposition of ultrathin oxide films
3. Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams
4. Nanometer-scale germanium islands on Si(111) surface windows formed in an ultrathin silicon dioxide film
5. Nanometer-scale Si selective epitaxial growth on Si surface windows in ultrathin oxide films fabricated using scanning tunneling microscopy
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1. Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique;Journal of The Electrochemical Society;2011
2. Transition temperature in the growing of poly-Si/amorphous-SiO2 by electron-beam evaporation;Journal of Applied Physics;2010-02
3. Atomistic Insights for InAs Quantum Dot Formation on GaAs(001) using STM within a MBE Growth Chamber;Small;2006-03
4. First principles calculation of Indium migration barrier energy on an InAs(001) surface;Thin Solid Films;2004-10
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