First-principles study of strained 2D MoS2-Reference-Cited by-同舟云学术

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First-principles study of strained 2D MoS2

Published:2014-02 Issue: Volume:56 Page:416-421
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Scalise E.,Houssa M.,Pourtois G.,Afanas′ev V.V.,Stesmans A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Ultrahigh electron mobility in suspended graphene

2. Single-layer MoS2 transistors

3. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

4. $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric

5. Direct observation of a widely tunable bandgap in bilayer graphene

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4. Electrically Controlled High Sensitivity Strain Modulation in MoS₂ Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates;Nano Letters;2024-07-01

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