Electrically Controlled High Sensitivity Strain Modulation in MoS<sub>2</sub> Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates-Reference-Cited by-同舟云学术

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Electrically Controlled High Sensitivity Strain Modulation in MoS₂ Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Published:2024-07-01 Issue:28 Volume:24 Page:8472-8480
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Varghese Abin¹²³^ORCID,Pandey Adityanarayan H.¹,Sharma Pooja¹,Yin Yuefeng¹,Medhekar Nikhil V.²^ORCID,Lodha Saurabh¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India

2. Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia

3. IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India

Funder

Australian Research Council

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c00357

Reference56 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

3. Evolution of Electronic Structure in Atomically Thin Sheets of WS2and WSe2

4. First-principles study of strained 2D MoS2

5. Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides

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